Topic reserved by: Antti Nummela 

 Introduction

Molecular beam epitaxy, also known as MBE is a highly controllable technique of growing epitaxial layers of semiconductor crystals that was invented in the 70’s to manufacture compound semiconductors and since then it has been widely used both in research and industry to for example grow single-crystal thin films and other nanostructures. Some of its main benefits are high purity levels achieved due to ultrahigh vacuum conditions and its capability to grow superlattices. Due to being an extremely slow process, great dimensional control is achievable. 

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